In one compact housing, the Xeva-1.7-320 TE3 digital camera combines a thermo-electrically cooled InGaAs detector head and the control and communic
Low-light-level imaging in semiconductor microscopy applications is used to detect faint emissions. This technique is also called photon emission microscopy or electroluminescence imaging. In general, electroluminescence is the emission of photons due to electrical stimulation.
Photon emission microscopy is typically done with SWIR cameras. In the SWIR band it is a proven technique for fault localization in microelectronic failure analysis.
Faults are localized by using several different techniques to isolate the defective areas on a die in the failed units. This is a very critical step in microelectronics as it dramatically reduces the area required for analysis. The localized defect is then characterized with a view to further understand the failure mechanism.
Photon emission can be caused by the following type of defects in the semiconductor material:
Photon emission from defects are generally associated with forward and reverse biased pn junctions, transistors in saturation or dielectric breakdown.