Semiconductor Inspection

The spectrum of low-level photon emissions caused by semiconductor crystal grid defects matches exactly the most sensitive realm of SWIR cameras fitted with thermoelectrically cooled InGaAs- or HgCdTe area sensors. Such sensors are therefore well suited for failure analysis and quality assurance tasks in semiconductor manufacturing. The positive results of these procedures can be successfully migrated to the economical characterization of nano-technology devices.

		Emission microscopy  Photoemission microscopy, or light emission microscopy, is a relatively new failure analysis technique for detecting photonic radiation from a defect site, primarily due to carrier recombination mechanisms.
		Failure analysis  Targeted failure analysis as applied in microelectronics is usually carried out in a five-step sequence: First is fault validation, followed by localizing the defect. Then the defect location is prepared and traced for analysis; the nature of the defect is determined and, finally, an investigation of its root causes is initiated.
		Solar cell inspection  SWIR imaging enables you to look “through” the silicon wafer and therefore allows inspection of defects and failures of solar cells, which cannot be detected and visualized by other methods.

Discover which camera could suit your needs

XS-1.7-320	Xeva-1.7-320
Flexibility for easy research	Advanced research in SWIR imaging
Xeva-1.7-640	Xeva-2.5-320
Advanced research in SWIR imaging	Flexible SWIR imaging camera up till 2.5 µm